Lateral waveguiding analysis of 1.3 microns InGaAsP-InP metal-clad ridge-waveguide (MCRW) lasers
Abstract
In the wavelength range of 1.3 microns the InGaAsP-InP metal-clad ridge-waveguide (MCRW) laser represents a comparatively low-expense coherent light source with high-performance lasing characteristics. The lateral mode guiding mechanism of this laser is analyzed by the effective refractive index approximation in order to study the influence of technological parameters on the waveguiding properties and to provide design curves. Besides the basic MCRW laser structure two new types of MCRW lasers are presented in which appreciably enhanced waveguiding efficiency is obtained by incorporation of an additional quaternary layer. The results are discussed with respect to an optimized device design. It is shown that by a proper choice of the device parameters effective refractive index steps in lateral direction of 1 x 10 to the -2nd are easily achieved. Thus lateral dielectric waveguiding can be established that by far dominates the gain-induced guiding mechanism.
- Publication:
-
Archiv Elektronik und Uebertragungstechnik
- Pub Date:
- October 1985
- Bibcode:
- 1985ArElU..39..311A
- Keywords:
-
- Gallium Arsenide Lasers;
- Optical Waveguides;
- Refractivity;
- Wave Propagation;
- Waveguide Lasers;
- Indium Phosphides;
- Laser Modes;
- Lasers and Masers