High field electron transport in n-InP/GaInAs two-dimensional electron gas
Abstract
High field electron transport in n-InP/GaInAs two-dimensional electron gas (2DEG) is studied at liquid helium temperature. In this experiment two kinds of samples are used: the first has a thick enough GaInAs layer to contain a three-dimensional gas; the other has a thin GaInAs layer containing only a 2DEG on the GaInAs side of the heterojunction. In the sample with the thick GaInAs layer, Gunn oscillations are observed above 2.2 kV/cm. In the sample with the thin GaInAs layer, Gunn oscillations do not occur and an irreversible decrease of the sheet concentration of 2DEG is obtained after applying a high electric field. The highest measured drift velocity of this sample is 4.4×107 cm/s at 3.8 kV/cm.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1985
- DOI:
- 10.1063/1.95871
- Bibcode:
- 1985ApPhL..46..875T
- Keywords:
-
- Carrier Transport (Solid State);
- Electron Gas;
- Electron Mobility;
- Gallium Arsenides;
- Indium Phosphides;
- N-Type Semiconductors;
- Conduction Bands;
- Drift Rate;
- Electron Density (Concentration);
- Gunn Effect;
- Solid-State Physics