GaAs/Ge/Si solar cells
Abstract
Shallow-homojunction GaAs solar cells fabricated on Ge-coated Si substrates have achieved conversion efficiencies of 14 and 11 percent (AM1, one sun) for areas of 0.093 and 0.51 sq cm, respectively. The electrical characteristics of the cells have been studied by quantum efficiency, junction diode factor and dark current measurements, and their structural properties by transmission electron microscopy and electron-beam-induced-current imaging. The effects of dislocations, which are the predominant defects in the GaAs layers, on solar cell performance are discussed. Recent advances in monolithic GaAs-Si tandem cells are also reported.
- Publication:
-
17th Photovoltaic Specialists Conference
- Pub Date:
- 1984
- Bibcode:
- 1984pvsp.conf..440T
- Keywords:
-
- Gallium Arsenides;
- Germanium;
- Homojunctions;
- Silicon;
- Solar Cells;
- Crystal Dislocations;
- Open Circuit Voltage;
- Quantum Efficiency;
- Short Circuit Currents;
- Volt-Ampere Characteristics;
- Energy Production and Conversion