Effect of hydrostatic pressure on trapping centers in strained-layer superlattice structures
Abstract
This paper reports initial results on the effects of hydrostatic pressure on the emission energies of two prominent deep levels in gamma-irradiated SLS's consisting of alternating layers of GaP and GaAsP grown by MOCVD. As the growth of an SLS effects the lattice constants of the individual components, the application of hydrostatic pressure to a semiconductor can also affect the lattice constant and the bulk electronic properties. This parallel suggests that the properties of the host-SLS may have an effect on the response of the trap to pressure.
- Publication:
-
Presented at the 17th Intern. Conf. on the Phys. of Semiconductors
- Pub Date:
- August 1984
- Bibcode:
- 1984psc..conf.....B
- Keywords:
-
- Gallium Arsenides;
- Gallium Phosphides;
- Hydrostatic Pressure;
- Superlattices;
- Trapping;
- Electrons;
- Irradiation;
- Radiation Effects;
- Temperature Dependence;
- Solid-State Physics