Furnace transient anneal process and apparatus
Abstract
A method for annealing semiconductor samples, especially following ion-implantation of semiconductor samples is disclosed. A furnace on a set of rails is passed over the semiconductor sample which is supported on a stationary wire basket made of low thermal mass, fine tungsten wire. The furnace temperature may be about 5 deg above the desired anneal temperature of the semiconductor sample such that the sample temperature rises to within a few degrees of the furnace temperature within seconds. Utilizing the moveable furnace insures uniform heating without elaborate temperature control or expensive beam generating equipment. The apparatus and process of the present invention are utilized for rapid annealing of ion-implanted indium phosphide semiconductors within 10 to 30 seconds and at temperatures of approximately 700 deg C, thereby eliminating undesired and damaging movement of impurities within the ion-implanated InP.
- Publication:
-
Patent Application Department of the Navy
- Pub Date:
- February 1984
- Bibcode:
- 1984padn.reptR....C
- Keywords:
-
- Annealing;
- Furnaces;
- Indium Phosphides;
- Semiconductors (Materials);
- Containers;
- Heat Treatment;
- Ion Implantation;
- Patent Applications;
- Quartz;
- Rails;
- Samplers;
- Supports;
- Temperature Gradients;
- Engineering (General)