X-ray lithography: Beamline U6
Abstract
Over the last decade there have been remarkable advances in the manufacture of integrated circuits. In 1974, the smallest features being replicated in production were about 4.0 microns wide; by now (1984) they have shrunk to 1.0 microns wide. At this size, however, it has become increasingly difficult to progress to smaller features because of the blurring caused by diffraction of the UV light used to expose the photoresist on the silicon wafers. Although there are techniques being developed to extend conventional optical lithography to smaller dimensions, they are difficult and costly. An alternative approach is to use X-rays, which, because of their much shorter wavelength, promise better resolution than can be obtained by todays's methods. The primary goal of this effort is to develop a system to use synchrotron radiation for X-ray lithography. Synchrotron radiation has two major advantages over conventional X-ray sources: the radiation is collimated, and it is orders of magnitude more intense. It is believed that a storage ring source will allow the best possible resolution with reasonable throughput.
- Publication:
-
Activity of the National Synchrotron Light Source (NSLS)
- Pub Date:
- 1984
- Bibcode:
- 1984nsls.rept...88S
- Keywords:
-
- Diffraction;
- Integrated Circuits;
- Photolithography;
- Synchrotron Radiation;
- Ultraviolet Radiation;
- Beams (Radiation);
- Lithography;
- Storage Rings (Particle Accelerators);
- Wafers;
- X Ray Irradiation;
- Nuclear and High-Energy Physics