1.5 to 1.7 micrometers LEDs (Light-Emitting Diode)
Abstract
This report describes research undertaken to develop InGaAsP/InP Light Emitting Diodes (LEDs) that emit light in the 1.5 to 1.7 micrometer spectral regions. These devices were to be optimized for the best coupling to optical fibers and for high-speed operation. The double-barrel vapor-phase-epitaxy reactor was used to fabricate most of these devices. Both antireflective (AR) and six-layer dielectric-stack reflective (R) facet coatings were developed for 1.3 and 1.55 micrometer LEDs. Reflectivities as high as 95% (R) and as low as 3% (AR) were measured at both wavelengths. Measured coupled power from fiber-coupled InGaAsP/InP LEDs (50 micrometer core, 0.2 numerical aperature (NA), graded index (GI) fiber) includes values of 41 microwatts at 1.42 micrometers, 56 microwatts at 1.55 micrometers, and 11 microwatts at 1.65 micrometers.
- Publication:
-
Final Technical Report
- Pub Date:
- September 1984
- Bibcode:
- 1984dsrc.rept.....O
- Keywords:
-
- Antireflection Coatings;
- Fiber Optics;
- Light Emitting Diodes;
- Vapor Phase Epitaxy;
- Coupling;
- Diodes;
- Light Emission;
- Micrometers;
- Optical Fibers;
- Power;
- Electronics and Electrical Engineering