Diffusion barrier for long wavelength laser diodes
Abstract
A diffusion barrier is created in a n-type heterojunction layer adjacent to the active region of a semiconductor laser by doping the n-type layer with a periodic table group VI element. The diffusion barrier in the n-type layer prevents the migration of acceptors into that layer. The group VI elements are, in particular, sulfur (S), selinium (Se), and tellurium (Te). The acceptor of concern is zinc (Zn).
- Publication:
-
Air Force Interim Report
- Pub Date:
- October 1984
- Bibcode:
- 1984aifo.reptU....H
- Keywords:
-
- Barrier Layers;
- Diodes;
- Heterojunctions;
- N-Type Semiconductors;
- Semiconductor Lasers;
- Acceptor Materials;
- Diffusion;
- Gallium Arsenides;
- Indium Phosphides;
- Migration;
- Patents;
- Sulfur;
- Tellurium;
- Wavelengths;
- Zinc;
- Lasers and Masers