Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures
Abstract
The operational and emission characteristics of injection lasers based on nonperiodic heterostructures are investigated. A study of the temperature dependence of threshold currents suggests that carrier leakage does not affect the heterolaser threshold currents up to room temperature; however, considerable variations in threshold current values were observed for structures grown from different heteroepitaxial plates. In a InGaAsSb/GaSb laser an 'antiwaveguide' phenomenon was observed, where an increasing carrier density caused the narrowing of the directivity pattern of the laser emission in the plane perpendicular to the p-n junction; the phenomenon is suggested to be useful in some lasing modes, such as nonwaveguide diode modes and the transfer of radiation to a waveguide based on a wider-band material with a larger index of refraction.
- Publication:
-
Trudy Akademiia Nauk SSSR Fizicheskii Institut
- Pub Date:
- May 1984
- Bibcode:
- 1984TrSSR.141...46D
- Keywords:
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- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Injection Lasers;
- Semiconductor Lasers;
- Aluminum Gallium Arsenides;
- Current Density;
- Gallium Antimonides;
- P-N Junctions;
- Threshold Currents;
- Lasers and Masers