Small-signal high-frequency performance of power MOS transistors
Abstract
The performance of power MOS transistor in high frequency linear applications is investigated in this paper. In particular, a model relating structural and layout parameters is developed and used to investigate the characteristics and limitations of the devices and to establish which device offers the best high frequency performance.
- Publication:
-
Solid State Electronics
- Pub Date:
- May 1984
- DOI:
- 10.1016/0038-1101(84)90148-5
- Bibcode:
- 1984SSEle..27..419M
- Keywords:
-
- Field Effect Transistors;
- Heterojunction Devices;
- Metal Oxide Semiconductors;
- Network Analysis;
- Transistor Circuits;
- Figure Of Merit;
- Gates (Circuits);
- High Frequencies;
- Silicides;
- V Grooves;
- Electronics and Electrical Engineering