Positron annihilation study of single-crystal silicon
Abstract
Previous results have indicated that processes responsible for the formation and motion of positronium (Ps) in silicon single crystals depend on the concentration of crystal defects. In order to confirm this dependence, simultaneous measurements were made of the wide component of the ADAP (angular distribution of annihilation photons) spectrum, which reflects the momentum distribution of electrons in Si, and two narrow components, corresponding to 'in-flight' annihilation of p-Ps emitted by both surfaces of the silicon wafer. Results indicate that the annihilation of p-Ps emitted from Si (111) can be observed directly, and that lattice imperfections in silicon wafers influence the efficiency with which positrons are converted into Ps atoms.
- Publication:
-
Soviet Physics Technical Physics
- Pub Date:
- February 1984
- Bibcode:
- 1984SPTP...29..244D