An InP FET for UHF power amplification
Abstract
The design and fabrication of InP MISFETs and MESFETs for UHF amplification is reported. The fundamental principles of FET design and the properties of InP are reviewed; the fabrication process (mainly vapor-phase epitaxy and vapor-phase deposition) are explained; and the effects of varying fabrication parameters are examined and illustrated in graphs and tables. The FETs developed use an isolated rather than a Schottky gate to eliminate gate leakage and edge breakdown. The MISFET employs a 500-nm-thick epitaxial layer on a semiinsulating substrate, doping at 10 to the 17th/cu cm, a low-temperature pyrolitic SiO2 layer, and a deep gate recess and achieves power output 4.2 W/mm and power-added efficiency 40 percent at 9 GHz and 4-dB gain.
- Publication:
-
Revue Technique Thomson CSF
- Pub Date:
- March 1984
- Bibcode:
- 1984RvT....16...47A
- Keywords:
-
- Field Effect Transistors;
- Indium Phosphides;
- Microwave Amplifiers;
- Mis (Semiconductors);
- Power Amplifiers;
- Ultrahigh Frequencies;
- Chromium;
- Dielectrics;
- Doped Crystals;
- Epitaxy;
- Mis (Semiconductors);
- Oxygen;
- Power Efficiency;
- Silicon Dioxide;
- Tin;
- Electronics and Electrical Engineering