Luminous points and breakdown in structure of GaAs transistors
Abstract
Physical effects preceding breakdown and failure of GaAs field effect transistors were studied. Irreversible structural changes are experimentally shown to be linked to the appearance of radiation at the drain layered according to differential conductivity and forming luminous points which increase in size as the potential rises. Liquid Ga then forms and conductive channels near the brightest points at the drain lead to irreversible breakdown followed by burn-out. It is found that there are different mechanisms for point formation and Schottky barrier failure and for the drain domain failure. This is supported by the spectra since radiation from drain points is shifted to the shortwave range because of the higher space charge region field on the Schottky barrier in comparison with the drain domain field.
- Publication:
-
USSR Rept Phys Math JPRS UPM
- Pub Date:
- September 1984
- Bibcode:
- 1984RpPhM....R..20G
- Keywords:
-
- Electrical Faults;
- Failure;
- Field Effect Transistors;
- Gallium Arsenides;
- Spectral Emission;
- Electric Potential;
- Electrical Resistivity;
- Liquid Phases;
- Space Charge;
- Electronics and Electrical Engineering