Theoretical analysis of physical processes of lasing medium degradation in semiconductor lasers

While the accumulated experimental data on the degradation of semiconductor lasing media attests to the influence of excess current carrier recombination on the rate of defect reactions in the semiconductors, the mechanism of this influence is theoretically unclear. This is primarily because no specific model was worked out for the elementary event of the conversion of the electron-hole pair energy to the kinetic energy of the atom (or defect) in the lattice which allows an accurate calculation of the event probability even in cases where it is extremely low. A defect formation mechanism based on the resonant capture of an electron in the resonant repulsive state of a composite system formed by the trapping center and the electron (resonant defect-forming capture) is proposed.