Passage of strong electromagnetic pulse through semiconductor in external magnetic field
Abstract
Passage of an ultrashort electromagnetic pulse through a semiconductor under conditions of cyclotron resonance is analyzed theoretically. The equations of motion are derived from the Hamiltonian for a conduction electron in a magnetic field, this Hamiltonian being approximated according to the Kane two band model. The solution for a rectangular pulse, with a nonparabolic dispersion in the conduction band, yields the possibility of a soliton. The form of the soliton depends on the threshold condition and on the deviation of the pulse carrier frequency from the cyclotron resonance frequency, with either a Lorentz soliton or a soliton approaching the sech (hyperbolic secant) form. The duration of solitons depends on their propagation velocity and on the properties of the medium.
 Publication:

USSR Rept Electron Elec Eng JPRS UEE
 Pub Date:
 March 1984
 Bibcode:
 1984RpEEE.......18G
 Keywords:

 Cyclotron Resonance;
 Electromagnetic Pulses;
 Magnetic Fields;
 Semiconductors (Materials);
 Solitary Waves;
 Theoretical Physics;
 Approximation;
 Carrier Frequencies;
 Hamiltonian Functions;
 Mathematical Models;
 Velocity Measurement;
 Wave Propagation;
 Communications and Radar