Noise characteristics of a cryogenically cooled GaAs metal semiconductor field effect transistor at 4 MHz
Abstract
The noise near 4 MHz of a cryogenically cooled GaAs metal semiconductor field effect transitor (MESFET) has been measured. The input noise current is iN=1.1±0.2×10-14 A/(Hz)1/2 and the additive voltage noise is eN=1.2±0.4×10-9 V/(Hz)1/2 , which gives a noise temperature TN=0.5 K.
- Publication:
-
Review of Scientific Instruments
- Pub Date:
- February 1984
- DOI:
- 10.1063/1.1137737
- Bibcode:
- 1984RScI...55..256B
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Noise Measurement;
- Noise Spectra;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Cryogenic Cooling;
- Semiconductor Devices;
- Electronics and Electrical Engineering