Subband resonance of electrons on Si(110)
Abstract
Infrared resonant absorption from electron subbands on n-type Si(110) is studied for surface densities Ns up to 1.2 × 1013 cm-2. The 0-->1 transition is observed in the perpendicular and, provided that the polarization is along the [110] axis in the surface, in the parallel-excitation modes. A distinct splitting on the order of 30% in Ns is found for the two modes. It results from the absence of the depolarization shift (i.e., α=0) in parallel excitation. The comparison with a calculated subband splitting permits the determination of the exciton energy. The resonance shifts rapidly to higher energy with rising temperature in the range 4.2-200 K.
- Publication:
-
Physical Review B
- Pub Date:
- March 1984
- DOI:
- 10.1103/PhysRevB.29.3449
- Bibcode:
- 1984PhRvB..29.3449N