High speed GaAs device and integrated circuit modelling and simulation

Discrete GaAs MESFETs have been adopted in microwave application for decades because of its high gain and low noise. Today using GaAs digital IC to achieve the highest speed for new generation computers and communication systems has become the main goal in the engineering. To reach this important goal, more efforts have to be done. The improvement of computer aided design is one of them. For example, the circuit simulation by using a computer is a necessary mean to predict circuit performance and to optimize circuit design. In order to simulate actual circuit accurately, good models for GaAs devices are indispensable. This thesis will introduce the development of models of the MESFET and the MODFET suitable for the circuit simulation and the implementation of these models in a circuit simulator, DOMES. The data acquisition technique, a linkage between the theoretical model and the experimental measurement, will also be mentioned. As to the rest of this thesis, they are related to the GaAs circuit simulation.