High pulsed power S-band GaAs FET amplifier module
Abstract
For phased array radar systems, the employment of solid-state power amplifiers appears desirable. At frequencies up to 1.5 GHz, silicon bipolar transistors are already being used in operational radar systems. For S-band frequencies (2-4 GHz), suitable solid-state devices for many radar applications are not yet available. Certain problems are encountered in connection with the development and the intended use of silicon bipolar power transistors for S-band frequencies. The present investigation is concerned with gallium arsenide field effect transistors which offer an attractive alternative to silicon bipolars because of their less complicated vertical geometry and potentially higher gain and efficiency. A description is provided of the development of a pulsed, high power GaAs FET amplifier module which serves as a precursor for those modules required in future S-band phased array radar systems.
- Publication:
-
Microwave Journal
- Pub Date:
- May 1984
- Bibcode:
- 1984MiJo...27..205T
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- Superhigh Frequencies;
- Transistor Amplifiers;
- Fabrication;
- Impedance Matching;
- Power Efficiency;
- Electronics and Electrical Engineering