InP monolithic integrated circuits for mm-wave applications

It is pointed out that devices and circuits fabricated from indium phosphide (InP) have a number of potential advantages over their silicon (Si) and gallium arsenide (GaAs) counterparts. Some of these advantages are related to transferred electron device (TED) operation at higher frequency, field effect transistor (FET) and TED operation at higher power, TED operation at higher efficiency and lower noise, and substrate compatibility for integration with reliable room temperature heterojunction lasers using GaInAsP. The potential advantages are expected to have an impact on future Navy system requirements for 1990 and beyond. For these reasons, InP has become the subject of an internal research program at the Naval Research Laboratory. Attention is given to aspects of materials growth and characterization, material tailoring for devices and circuits, circuit building blocks, FETs, TEDs, mixer diodes, passive components, and potential circuit applications.