17 GHz low noise GaAs FET amplifier
Abstract
The considered amplifier is suitable for use as the first stage in a direct broadcast TV satellite receiver, and it was specifically designed for the Unisat spacecraft. Attention is given to RF device characterization, the design of the low-noise FET amplifier, the very significant dispersion effects at 17 GHz, the noise figure, and questions of DC bias. Balanced stages are used for low-noise and high-gain amplifiers to enhance the reliability. The noise figure of the amplifier is approximately 3.75 dB in the frequency band of interest. A low-noise microstrip GaAs FET amplifier circuit is shown.
- Publication:
-
Microwave Journal
- Pub Date:
- October 1984
- Bibcode:
- 1984MiJo...27..121B
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Low Noise;
- Microwave Amplifiers;
- Television Receivers;
- Broadcasting;
- High Gain;
- Microstrip Devices;
- Reliability Engineering;
- Satellite Television;
- Superhigh Frequencies;
- Transistor Amplifiers;
- Electronics and Electrical Engineering