Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
Abstract
GaAs MESFET ring oscillators were successfully fabricated on silicon substrate. GaAs epitaxial layers were grown directly by MOCVD on Si(100) substrate. A typical transconductance of 200 mS/mm was observed for the FET of 1.0 μm × 10 μm gate. A minimum propagation delay time of 51 ps/gate at a power dissipation of 1.1 mW/gate was observed for an E/D gate ring oscillator with gate length of 1.0 μm.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- December 1984
- DOI:
- 10.1143/JJAP.23.L919
- Bibcode:
- 1984JaJAP..23L.919N
- Keywords:
-
- Electrical Properties;
- Field Effect Transistors;
- Gallium Arsenides;
- Organometallic Compounds;
- Oscillators;
- Vapor Deposition;
- Electric Potential;
- Fabrication;
- Microstructure;
- Schottky Diodes;
- Threshold Currents;
- Electronics and Electrical Engineering