MOCVD Growth and Characterization of (AlxGa1-x)yIn1-yP/GaAs

We have demonstrated the MOCVD growth of AlGaInP under low pressure using a self-cracking system (SCS) for the group V hydride (PH₃). In InGaP growth, the incorporation efficiency of In atoms for the SCS method is higher than that for the conventional method. For AlInP growth, however, efficiency did not depend on growth methods or growth temperatures. The compositions of AlGaInP are independent of PH₃ flow rates and growth temperatures. These results indicate that it is easy to control the alloy compositions of the AlGaInP/GaAs system using the SCS method, even though growth conditions fluctuate slightly.