Evidence for transient composition variations at GaAs/Ga1-xAlxAs heterostructure interfaces prepared by metal-organic chemical vapour deposition
Abstract
The composition profiles of GaAs/Ga1-xAlxAs heterostructures prepared in two different Metal-Organic Chemical Vapour Deposition (MOCVD) reactors have been studied. Transmission electron microscopy (TEM). and Auger and secondary ion mass spectrometry (SIMS) sputter profiling results are in good agreement and interface widths below 20 å have been achieved. Significant new results on transient phenomena have been obtained. showing that large and sometimes very sharp excursions in composition can be associated with valve switching actions. Direct evidence is presented that gas pressure or flow transients can occur during valve operations. and it is suggested that such instabilities are the cause of the effects observed.
- Publication:
-
Journal of Electronic Materials
- Pub Date:
- November 1984
- DOI:
- 10.1007/BF02655311
- Bibcode:
- 1984JEMat..13..969T