High-uniformity liquid phase epitaxial InGaAsP (λ = 1.3 μm)

It is shown that the InGaAsP quaternary grown by constant temperature liquid phase epitaxy on InP substrates can, under special conditions of growth solution supersaturation and epitaxial layer mismatch, exhibit considerably narrower rocking curve half-widths than previously reported. Double crystal X-ray diffraction determinations of the layer crystallinity of InGaAsP (λ = 1.3 μm) are made using Cu K α ₁ radiation for (400) reflections. Half-widths as small as 13 arc seconds, which approach the InP limit, are observed