A comparison of conventional Co-60 testing and low dose-accumulation-rate exposure of metal-gate CMOS IC's
Abstract
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- 10.1109/TNS.1984.4333556
- Bibcode:
- 1984ITNS...31.1582R
- Keywords:
-
- Cmos;
- Integrated Circuits;
- Ionizing Radiation;
- Radiation Dosage;
- Radiation Hardening;
- Annealing;
- Cobalt 60;
- High Temperature;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Electronics and Electrical Engineering