Total-dose and charge-trapping effects in gate oxides for CMOS LSI devices
Abstract
The effect of gamma-irradiation on CMOS devices fabricated using 3 Micron CMOS BULK process has been studied as a function of gate oxide processing and subsequent annealing. Threshold shifts, speed degradation, and power supply currents were measured as a function of total dose up to 10 to the 6th rad (Si). Using hot electron injection techniques, trapping densities and capture cross-sections of the traps in each oxide type have been determined at pre- and post-irradiation levels. Power supply leakage and speed performance of the devices were recovered within three to five hours by annealing them at 125 C, +10 V bias.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- 10.1109/TNS.1984.4333541
- Bibcode:
- 1984ITNS...31.1518S
- Keywords:
-
- Cmos;
- Large Scale Integration;
- Radiation Dosage;
- Radiation Effects;
- Threshold Gates;
- Trapped Particles;
- Annealing;
- Fabrication;
- Gamma Rays;
- Oxides;
- Performance Tests;
- Radiation Hardening;
- Electronics and Electrical Engineering