Total-dose and dose-rate dependence of proton damage in MOS devices during and after irradiation
Abstract
Rad-hard CMOS/bulk inverters with input gates high and low were irradiated by protons with a nominal energy of 8 MeV in an effort to determine the total-dose and dose-rate dependence of threshold voltage shifts, both during and immediately after irradiation and over extended periods of time thereafter. It is shown that the effects in rad-hard MOS devices which are produced by specific proton and electron energies in the space environment could be simulated by cobalt-60 induced effects through careful and proper selection of total does and dose rates. This selection must be based on an experimentally established relationship of Co-60 to electron or proton damage. It is demonstrated that the simulation can be accomplished both during and after irradiation, in the long-term postirradiation period, as well as in the damage state immediately after bombardment.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1984
- DOI:
- 10.1109/TNS.1984.4333527
- Bibcode:
- 1984ITNS...31.1444S
- Keywords:
-
- Circuit Protection;
- Cmos;
- Proton Irradiation;
- Radiation Damage;
- Charged Particles;
- Cobalt;
- Electric Potential;
- Gamma Rays;
- Inverters;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Threshold Voltage;
- Thresholds;
- Electronics and Electrical Engineering