CMOS Shift Register Circuits for Radiation-Tolerant VLSI's
Abstract
A radiation-tolerant VLSI circuits investigation has been carried out using CMOS/SOS shift registers. Static and dynamic circuit performance degradation is discussed, based on MOS FET parameter shifts due to radiation effects, utilizing γ-ray irradiation and SPICE simulation. Functionality, after radiation doses in excess of 105; rad (Si), is shown for circuits fabricated by radiation-hardened process. Radiation-tolerance superiority of clocked gate CMOS (C2MOS) shift register circuits to transfer gate shift register circuits is discussed, placing emphasis mainly on radiation-bias effects. Based on the above results, the C2MOS is proposed for use in radiation-tolerant SOS VLSI circuits.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- October 1984
- DOI:
- 10.1109/TNS.1984.4333436
- Bibcode:
- 1984ITNS...31.1034H
- Keywords:
-
- Circuit Reliability;
- Cmos;
- Radiation Hardening;
- Radiation Tolerance;
- Shift Registers;
- Very Large Scale Integration;
- Environment Simulation;
- Field Effect Transistors;
- Frequency Shift;
- Gamma Rays;
- Sos (Semiconductors);
- Electronics and Electrical Engineering