Effects of doping profile on GaAs doubledrift IMPATT diodes at 33 and 44 GHz using the energymomentum transport model
Abstract
Masse et al. (1979) have found experimentally that the drift lengths for millimeterwave GaAs IMPATTs should be shorter than the values predicted by a conventional driftdiffusion analysis which uses the static velocityfield characteristic for GaAs. The present investigation is concerned with the optimization of doubleread GaAS IMPATT doping profiles for maximum efficiency with respect to drift region lengths and integrated charge in the doping spikes at 33.7 and 44 GHz. It is pointed out that for both frequencies, the best efficiency is obtained for electron drift region lengths significantly shorter than the values predicted by conventional IMPATT theory. The optimum electric field level at the edges of the highfield regions was found to be in the range from 250,000 to 280,000 V/cm for the case where the fields on both sides are approximately equal.
 Publication:

IEEE Transactions on Microwave Theory Techniques
 Pub Date:
 October 1984
 DOI:
 10.1109/TMTT.1984.1132847
 Bibcode:
 1984ITMTT..32.1353E
 Keywords:

 Avalanche Diodes;
 Carrier Injection;
 Carrier Transport (Solid State);
 Gallium Arsenides;
 Microwave Oscillators;
 Charge Distribution;
 Computerized Simulation;
 Energy Conversion Efficiency;
 Optimization;
 PN Junctions;
 Power Gain;
 VoltAmpere Characteristics;
 Electronics and Electrical Engineering