Effects of doping profile on GaAs double-drift IMPATT diodes at 33 and 44 GHz using the energy-momentum transport model
Abstract
Masse et al. (1979) have found experimentally that the drift lengths for millimeter-wave GaAs IMPATTs should be shorter than the values predicted by a conventional drift-diffusion analysis which uses the static velocity-field characteristic for GaAs. The present investigation is concerned with the optimization of double-read GaAS IMPATT doping profiles for maximum efficiency with respect to drift region lengths and integrated charge in the doping spikes at 33.7 and 44 GHz. It is pointed out that for both frequencies, the best efficiency is obtained for electron drift region lengths significantly shorter than the values predicted by conventional IMPATT theory. The optimum electric field level at the edges of the high-field regions was found to be in the range from 250,000 to 280,000 V/cm for the case where the fields on both sides are approximately equal.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- October 1984
- DOI:
- 10.1109/TMTT.1984.1132847
- Bibcode:
- 1984ITMTT..32.1353E
- Keywords:
-
- Avalanche Diodes;
- Carrier Injection;
- Carrier Transport (Solid State);
- Gallium Arsenides;
- Microwave Oscillators;
- Charge Distribution;
- Computerized Simulation;
- Energy Conversion Efficiency;
- Optimization;
- P-N Junctions;
- Power Gain;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering