2-20-GHz GaAs traveling-wave power amplifier
Abstract
The design of one and two-stage FET traveling-wave amplifiers operating at 2-20 GHz is presented. The design criteria, tradeoffs, and constraints are discussed in detail. The designs developed are illustrated in diagrams and photographs, and performance results from prototype amplifiers are shown in graphs. The one-stage amplifier chip is 2.31 x 3.64 mm on 100-micron GaAs substrate and has power output over 250 mW and gain 4 + or - 1 dB over the 2-21 GHz band; the two-stage chip is 2.31 x 6.95 mm and has 9 + or - 2 dB gain.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1984
- DOI:
- 10.1109/TMTT.1984.1132667
- Bibcode:
- 1984ITMTT..32..290A
- Keywords:
-
- Amplifier Design;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- Traveling Wave Amplifiers;
- Cascade Control;
- Chips (Electronics);
- Frequency Response;
- Performance Prediction;
- Power Gain;
- Superhigh Frequencies;
- Electronics and Electrical Engineering