Design of broad-band power GaAs FET amplifiers
Abstract
A model is presented for the drain-gate breakdown phenomenom of GaAs FET's, based on experimental results. This breakdown model is added to a previously published large-signal model and incorporated in a powerful computer-aided design program called LSFET. The program is capable of searching for the optimum power load for an FET and simulating the power performance of multistage amplifiers. The design of power amplifiers is discussed in detail, using the knowledge gained from LSFET. Data is presented from a fabricated monolithic broad-band power amplifier chip showing good agreement between measured results and simulated curves.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1984
- DOI:
- 10.1109/TMTT.1984.1132663
- Bibcode:
- 1984ITMTT..32..261T
- Keywords:
-
- Amplifier Design;
- Broadband Amplifiers;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- Chips (Electronics);
- Computer Aided Design;
- Equivalent Circuits;
- Fabrication;
- Frequency Response;
- Integrated Circuits;
- Power Gain;
- Electronics and Electrical Engineering