Dynamic behavior of pulsed-IMPATT oscillators
Abstract
A method of simulating the dynamic behavior of pulsed-IMPATT oscillators is presented. It is assumed that the simulation variables change slowly with respect to the RF period so that the quasi-static approximation may be used. A comparison of simulation results with experimental results for an X-band circuit is given.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- February 1984
- DOI:
- 10.1109/TMTT.1984.1132648
- Bibcode:
- 1984ITMTT..32..208M
- Keywords:
-
- Avalanche Diodes;
- Computerized Simulation;
- Dynamic Characteristics;
- Microwave Oscillators;
- Pulse Generators;
- Transient Response;
- Equivalent Circuits;
- Gallium Arsenides;
- Off-On Control;
- Performance Prediction;
- Quasi-Steady States;
- Superhigh Frequencies;
- Electronics and Electrical Engineering