S- and X-band GaAs FET mixers with thin-film lumped elements
Abstract
The design and performance of 2- and 11-GHz band mixers with a single-gate GaAs FET are presented in this paper. A mixer configuration in which the local oscillator (LO) signal is applied to the source is used. Matching networks are constructed with thin-film lumped elements fabricated on alumina. An SSB noise figure of 6.2 dB, with an associated conversion gain of 10 dB, has been achieved at the 11-GHz band, and SSB noise figures of less than 6 dB and a conversion gain of more than 8 dB over a 40-percent bandwidth are obtained at the 2-GHz band.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- January 1984
- DOI:
- 10.1109/TMTT.1984.1132629
- Bibcode:
- 1984ITMTT..32..135O
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Mixing Circuits;
- Thin Films;
- Background Noise;
- Equivalent Circuits;
- Mixers;
- Performance Tests;
- Signal Mixing;
- Superhigh Frequencies;
- Ultrahigh Frequencies;
- Electronics and Electrical Engineering