Recent advances in device processing and packaging of high-power pulsed GaAs double-drift IMPATT's at X-band
Abstract
High-power multimesa GaAs hybrid double-drift IMPATT's have been developed for pulsed operation at X-band. The diodes are fabricated from GaAs material grown by a novel 'infinite' solution liquid phase epitaxial process. The use of specialized rapid thermal processing and packaging techniques has enabled the fabrication of high-power IMPATT oscillators that have delivered peak output powers of over 40 W with 20-percent efficiency under pulsed RF operation at X-band frequencies. The diodes are constructed with an integral heat sink and bounded with a Au-Sn eutectic solder in a microwave package.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- August 1984
- DOI:
- 10.1109/T-ED.1984.21658
- Bibcode:
- 1984ITED...31.1044V
- Keywords:
-
- Avalanche Diodes;
- Electric Pulses;
- Electronic Packaging;
- Gallium Arsenides;
- Microwave Oscillators;
- Superhigh Frequencies;
- Capacitance-Voltage Characteristics;
- Electric Fields;
- Fabrication;
- Liquid Phase Epitaxy;
- Thermal Resistance;
- Electronics and Electrical Engineering