Threshold and sheet concentration sensitivity of high electron mobility transistors
Abstract
The paper presents results of an analysis of the dependence of the threshold voltage and the sheet carrier concentration on background substrate doping. Al(1-x)Ga(x)As doping, thickness, and metal barrier height in the high electron mobility transistor at room and liquid nitrogen temperatures. The sensitivity of threshold voltage and sheet carrier concentration to buffer layer or substrate background concentrations improves at lower temperatures. The sensitivity of threshold voltage and sheet carrier concentration to Ga(1-x)Al(x)As doping and thickness degrades at lower temperatures. The threshold sensitivity to barrier height is temperature independent but increases for sheet carrier concentration at lower temperatures. The design of a device structure for integrated circuit application with minimal threshold variations will require an optimal design of the device and will depend on the status of control of the various parameters.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1984
- DOI:
- 10.1109/T-ED.1984.21625
- Bibcode:
- 1984ITED...31..879T
- Keywords:
-
- Aluminum Gallium Arsenides;
- Carrier Density (Solid State);
- Doped Crystals;
- High Electron Mobility Transistors;
- Barrier Layers;
- Conduction Bands;
- Electric Potential;
- Sensitivity;
- Thickness;
- Threshold Voltage;
- Thresholds;
- Electronics and Electrical Engineering