A simplified capless annealing of GaAs for MESFET applications
Abstract
A simple capless annealing technique for post-implantation annealing of a GaAs wafer is described. The technique incorporates a novel boat design and uses InAs as the source of arsenic overpressure. Using this technique, wafers annealed at 850 C show mobilities in the range of 4000 sq cm/(V S) with over 85-percent activation for a Si dose of 5 x 10 to the 12th per sq cm. Dopant depth profiles with peak donor densities of 2 x 10 to the 17th per cu cm and minimal tailing were demonstrated. Electron channeling data show that crystallinity is fully restored during the anneal. 1-micron gate length MESFETs processed on n(+)-n implanted layers exhibited transconductance equal to or greater than 160 mS/mm and pinchoff voltages in the range of 3 V.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1984
- DOI:
- 10.1109/T-ED.1984.21557
- Bibcode:
- 1984ITED...31..506P
- Keywords:
-
- Annealing;
- Field Effect Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Doped Crystals;
- Electron Tunneling;
- Heat Treatment;
- Wafers;
- Electronics and Electrical Engineering