Dominant subthreshold conduction paths in short-channel MOSFET's
Abstract
The present investigation tries to settle a controversy concerning the conduction mechanism involved in the punchthrough current in a short-channel MOS device. On the basis of a simple quasi-two-dimensional analysis and two-dimensional simulations, it is shown that the punchthrough mode in an ordinary off-biased MOS device is intimately related to the direction of surface bending at the specific biases. Attention is given to the leakage mechanism in a donor-doped polysilicon gate n-channel device and its changes from the surface mode to the bulk mode, the simulated and measured I-V characteristics of boron-doped p-channel devices, and boron-counterdoped p-channel devices for bulk CMOS processes.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1984
- DOI:
- 10.1109/T-ED.1984.21548
- Bibcode:
- 1984ITED...31..440F
- Keywords:
-
- Boron Compounds;
- Electron Density Profiles;
- Field Effect Transistors;
- Leakage;
- Volt-Ampere Characteristics;
- Doped Crystals;
- Hole Distribution (Electronics);
- Electronics and Electrical Engineering