A new structure GaAs MESFET with a selectively recessed gate

A new structure for GaAs MESFET's has been proposed. The structure features a gate recess which is formed on the original surface of an MBE grown GaAs active layer through selective etching of the overgrown n(+)-Ga(1-x)Al(x)As source/drain layer. Because of heavy doping in the Ga(1-x)Al(x)As layer, the new MESFET structure offers a low source resistance. The selective etching technique for gate recess formation holds the MBE grown active layer thickness unchanged. As a result, the FET characteristics such as I(DSS) and V(P) of devices fabricated from one wafer are strikingly uniform.