Correspondence between MOS and modulation-doped structures
Abstract
There is currently considerable interest in the development of modulation-doped field-effect transistors suitable for high-speed applications. A promising version of the modulation-doped FET consists of a Schottky-barrier contact atop a thin Al(x)Ga(1-x)As layer on a lightly doped GaAs underlayer. It is pointed out that for a n-AlGaAs/p-GaAs structure, the conduction band discontinuity at the AlGaAs-GaAs interface gives rise to an inversion layer at the GaAs surface. The present paper is concerned with the physical correspondence between n-AlGaAs/p-GaAs modulation-doped structures and MOS structures. It is shown that certain key modulation-doped relationships can be obtained directly from MOSFET relationships.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- March 1984
- DOI:
- 10.1109/T-ED.1984.21533
- Bibcode:
- 1984ITED...31..383P
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Heterojunction Devices;
- High Electron Mobility Transistors;
- Metal Oxide Semiconductors;
- Schottky Diodes;
- Band Structure Of Solids;
- Conduction Bands;
- Doped Crystals;
- Electron Gas;
- P-N Junctions;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering