Dependence of the Schottky barrier height of GaP/polymer/Au diodes on the area per carboxylic acid group
Abstract
Langmuir-Blodgett monolayers of derivatives of poly(styrene/maleic anhydride) were deposited on n-type gallium phosphide. The Schottky barrier height of the resulting devices was shown to depend on the area per carboxylic acid group at the semiconductor-insulator interface. The barrier height changes were attributed to an interfacial dipole layer formed by the reaction of the headgroups with the native oxide/hydroxide surface layer on the semiconductor.
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- August 1984
- Bibcode:
- 1984IPSSE.131..125W
- Keywords:
-
- Barrier Layers;
- Gallium Phosphides;
- Interface Stability;
- Mis (Semiconductors);
- Schottky Diodes;
- Carboxylic Acids;
- Energy Bands;
- Gold;
- Metal Films;
- Monomolecular Films;
- Polymeric Films;
- Surface Reactions;
- Electronics and Electrical Engineering