Extended measurements of gallium arsenide breakdown characteristics using punchthrough structures
Abstract
It is pointed out that the breakdown characteristics of gallium arsenide at low doping levels are of significance to high-voltage power device structures. The present investigation is concerned with the extension of experimental measurements of the avalanche breakdown characteristics of gallium arsenide to doping levels below 10 to the 15th atoms per cu cm. In the experiments, n-type epitaxial layers were grown on (100)-oriented, n(+) substrates using vapor-phase epitaxy. The results of the measurements are listed in a table. This table lists the measured carrier concentration and thickness of the epitaxial layer, together with the measured breakdown voltage.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1984
- DOI:
- 10.1109/EDL.1984.25955
- Bibcode:
- 1984IEDL....5..385B
- Keywords:
-
- Electrical Measurement;
- Electron Avalanche;
- Gallium Arsenides;
- Schottky Diodes;
- Semiconductors (Materials);
- Carrier Density (Solid State);
- Doped Crystals;
- Field Effect Transistors;
- High Voltages;
- Vapor Phase Epitaxy;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering