Burst and low-frequency generation-recombination noise in double-heterojunction bipolar transistors
Abstract
The low-frequency noise in a double-heterojunction bipolar transistor (DHBT) consisted of burst noise and generation-recombination g-r noise. The current dependence of the base burst noise with floating collector was of the form I(B) to the third and the current dependence of the collector g-r noise with HF short circuited base was as I(c) to the 3/2. The centers involved in the noise generation had an activation energy of about 0.40 eV, with an indication of a second center of lower energy in the collector noise.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1984
- DOI:
- 10.1109/EDL.1984.25916
- Bibcode:
- 1984IEDL....5..277Z
- Keywords:
-
- Bipolar Transistors;
- Carrier Transport (Solid State);
- Electromagnetic Noise;
- Heterojunction Devices;
- Low Frequencies;
- Current Density;
- Noise Generators;
- Noise Spectra;
- Random Noise;
- Recombination Reactions;
- Electronics and Electrical Engineering