Control of threshold voltage of AlGaAs/GaAs 2DEG FET's through heat treatment
Abstract
Threshold voltage (V sub TH) controls of Ni/Ti/Au gate and Ti/Au gate two-dimensional electron gas FETs by heat treatment alone are investigated. Experimental results are presented which show that the change of V sub TH through heat treatment is much larger for Ni/Ti/Au gate FETs than for Ti/Au gate FETs. A mechanism for penetrating the barrier metal into the underlying layer is discussed.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1984
- DOI:
- 10.1109/EDL.1984.25903
- Bibcode:
- 1984IEDL....5..241T
- Keywords:
-
- Aluminum Gallium Arsenides;
- Electron Gas;
- Field Effect Transistors;
- Gallium Arsenides;
- Heat Treatment;
- Threshold Gates;
- Threshold Voltage;
- Electric Potential;
- Electron Mobility;
- Schottky Diodes;
- Temperature Effects;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering