An n-channel MOSFET with Schottky source and drain
Abstract
An n-channel MOSFET with Schottky source and drain (SBMOSFET) has been successfully fabricated using tantalum for the Schottky electrodes. For long gatelengths (100 microns), there are no significant differences in the characteristics of these SBMOSFET's compared to those of conventional MOSFET's. A significant current reduction is observed in SBMOSFET's having 10-micron gatelengths, however, due to the barrier between source and channel. In spite of the substantial barrier height (0.7 V) between tantalum and p-silicon, still larger barriers and a reduction in the isolation gap between source and channel are desirable for high-drive-high-speed device operation.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- April 1984
- Bibcode:
- 1984IEDL....5..108W
- Keywords:
-
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- N-Type Semiconductors;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Carrier Transport (Solid State);
- Energy Bands;
- Fabrication;
- Microminiaturization;
- Very Large Scale Integration;
- Electronics and Electrical Engineering