A Broadband Bipolar Transistor Amplifier for Gbit/S Applications, Developed with a CAD Optimization Program
Abstract
Computer-aided design (CAD) techniques were employed to obtain a flat frequency response in the 50 MHz to 1.8 GHz range from a three stage bipolar transistor amplifier. The CAD method was used in order to account for all parasitic losses. Design goals included a 3 dB bandwidth of 2 GHz, an entrance reflection coefficient of less than -20 dB, and a voltage swing of about 1 V at the amplifier output. The frequency response was attained with transmission lines. A further improvement of 4 dB over the measured transfer gain is projected if transmission line impedances different from 50 dB are used and optimized emitter resistors are installed. Circuit diagrams of the amplifier are provided.
- Publication:
-
Frequenz
- Pub Date:
- May 1984
- DOI:
- 10.1515/FREQ.1984.38.5.121
- Bibcode:
- 1984Freq...38..121A
- Keywords:
-
- Amplifier Design;
- Broadband Amplifiers;
- Computer Aided Design;
- Microwave Amplifiers;
- Network Analysis;
- Transistor Amplifiers;
- Bipolar Transistors;
- Capacitors;
- Electron Optics;
- Frequency Response;
- Optimization;
- Transistor Circuits;
- Transmission Lines;
- Electronics and Electrical Engineering