High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz
Abstract
High-power and high-efficiency InP Gunn diodes which were made from wafers grown by LP-MOCVD have been developed in the millimetre-wave range. Average power levels in excess of 50 mW were obtained at 94 GHz with an efficiency of 3 percent, while an optimized structure operating at 75 mW has been obtained with an efficiency of 2.4 percent.
- Publication:
-
Electronics Letters
- Pub Date:
- December 1984
- DOI:
- Bibcode:
- 1984ElL....20.1061D
- Keywords:
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- Gunn Diodes;
- Indium Phosphides;
- Microwave Oscillators;
- Millimeter Waves;
- Power Efficiency;
- Vapor Deposition;
- Low Pressure;
- Organometallic Compounds;
- Power Conditioning;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering