Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser
Abstract
An AlGaAs/GaAs graded-index-waveguide separate-confinement-heterostructure (GRIN-SCH) single-quantum-well (SQW) laser has been monolithically integrated with a couple of field-effect-transistor drivers on a semi-insulating GaAs substrate. The adoption of the GRIN-SCH SQW laser has enabled an improvement in the laser/FET performance, exhibiting a low laser threshold current (12 mA) and a high sensitivity of the output light power to the input gate voltage (7.5 mW/facet/V).
- Publication:
-
Electronics Letters
- Pub Date:
- October 1984
- DOI:
- 10.1049/el:19840636
- Bibcode:
- 1984ElL....20..936W
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Gallium Arsenide Lasers;
- Integrated Circuits;
- Laser Outputs;
- Waveguide Lasers;
- Gradient Index Optics;
- Heterojunction Devices;
- Integrated Optics;
- Photonics;
- Threshold Currents;
- Lasers and Masers