Low-dark-current low-voltage 1.3-1.6 micron avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxy
Abstract
- Publication:
-
Electronics Letters
- Pub Date:
- July 1984
- DOI:
- 10.1049/el:19840437
- Bibcode:
- 1984ElL....20..635C
- Keywords:
-
- Avalanche Diodes;
- Electric Fields;
- Molecular Beam Epitaxy;
- Photoabsorption;
- Photodiodes;
- Volt-Ampere Characteristics;
- Energy Gaps (Solid State);
- Heterojunction Devices;
- High Gain;
- Low Currents;
- Low Voltage;
- Prototypes;
- Radiation Effects;
- Electronics and Electrical Engineering