InP mixer diodes with etched via ohmic contacts
Abstract
InP mixer diodes processed with Ag/TiW/Au Schottky diodes have exhibited a noise figure of 6.5-7.0 dB at 94 GHz. InP surface preparation is shown to be critical in diode performance. An indium-stabilised surface has resulted in a barrier height of 0.45 eV.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1984
- DOI:
- Bibcode:
- 1984ElL....20..378C
- Keywords:
-
- Contact Resistance;
- Indium Phosphides;
- Microwave Circuits;
- Mixing Circuits;
- Schottky Diodes;
- Etching;
- Fabrication;
- Semiconducting Films;
- Semiconductor Diodes;
- Signal Mixing;
- Thin Films;
- Vapor Phase Epitaxy;
- Electronics and Electrical Engineering